elektronische bauelemente 2SB1116A -1 a, -80 v pnp plastic encapsulated transistor 21-jan-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c e k f d b g h j 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features high collector power dissipation complementary to 2sd1616a classification of h fe(1) product-rank 2SB1116A-l 2SB1116A-k 2SB1116A-u range 135~270 200~400 300~600 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -80 v collector to emitter voltage v ceo -60 v emitter to base voltage v ebo -6 v collector current - continuous i c -1 a collector power dissipation p c 0.75 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -80 - - v i c = -100 a, i e =0 collector to emitter breakdown voltage v (br)ceo -60 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -6 - - v i e = -100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -80v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -6v, i c =0 h fe (1) 135 - 600 v ce = -2v, i c = -0.1a dc current gain h fe (2) 81 - - v ce = -2v, i c = -1a collector to emitter saturation voltage v ce(sat) - - -0.3 v i c = -1a, i b = -50ma base to emitter saturation voltage v be(sat) - - -1.2 v i c = -1a, i b = -50ma base to emitter voltage v be -0.6 - -0.7 v v ce = -2v, i c = -0.05a collector-base capacitance c cb - 25 - pf v cb = -10v, i e =0, f=1mhz transition frequency f t 70 - - mhz v ce = -2v, i c = -0.1a turn-on time t on - 0.07 - storage time t s - 0.7 - fall time t f - 0.07 - us v cc = -10v, i c = -0.1a, i b1 = -i b2 = -0.01a v be(off) = 2 ~ 3v to-92 1 11 1 emitter 2 22 2 collector 3 33 3 base millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
elektronische bauelemente 2SB1116A -1 a, -80 v pnp plastic encapsulated transistor 21-jan-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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